IRF3808 International Rectifier Corp., IRF3808 Datasheet
IRF3808
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IRF3808 Summary of contents
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... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA HEXFET( registered trademark of International Rectifier. www.irf.com AUTOMOTIVE MOSFET G @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ 94291B IRF3808 ® HEXFET Power MOSFET 75V DSS R = 0.007 DS(on 140AV D S TO-220AB Max. ...
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... IRF3808 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Fig 3. Typical Transfer Characteristics www.irf.com 1000 TOP BOTTOM 100 10 ° 100 0.1 Fig 2. Typical Output Characteristics 3 2 175°C 2.0 1.5 1.0 0.5 0.0 -60 9.0 11.0 13.0 15.0 Fig 4. Normalized On-Resistance IRF3808 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage ( 137A -40 - ...
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... IRF3808 100000 0V, C iss = rss = oss = 10000 Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000. 175°C 100.00 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3808 D.U. 10V µ d(off ...
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... IRF3808 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...
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... Figure 15, 16). jmax t Average time in avalanche 125 150 175 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF3808 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-03 1.0E-02 1.0E-01 . This is validated for jmax jmax · 1/2 ( 1.3· ...
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... IRF3808 * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane S Low Leakage Inductance Current Transformer - - dv/dt controlled by R ...
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... RECTIFIER LOGO ASSEMBLY LOT CODE Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.02/02 IRF3808 - B - 1.32 (.05 2) 1.22 (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...