K4S280832F-TC75 Samsung, K4S280832F-TC75 Datasheet
K4S280832F-TC75
Specifications of K4S280832F-TC75
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K4S280832F-TC75 Summary of contents
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... SDRAM 128Mb F-die (x4, x8, x16) 128Mb F-die SDRAM Specification * Samsung Electronics reserves the right to change products or specification without notice. Revision 1.2 May 2004 CMOS SDRAM Rev. 1.2 May 2004 ...
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SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November, 2003) - Preliminary spec release. Revision 1.0 (January, 2004) - Revision 1.0 spec release. ...
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... Cycle) GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGcs high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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SDRAM 128Mb F-die (x4, x8, x16) Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 r0.10 0.21 0.875 r0.004 0.008 +0.10 0.30 0.80 -0.05 0.004 0.0315 0.012 -0.002 54Pin TSOP(II) ...
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... ADD LCKE LRAS LCBR CLK CKE CS * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register Column Decoder Latency & Burst Length ...
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SDRAM 128Mb F-die (x4, x8, x16) PIN CONFIGURATION (Top view) x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 N.C ...
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SDRAM 128Mb F-die (x4, x8, x16) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ...
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SDRAM 128Mb F-die (x4, x8, x16) DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK ...
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SDRAM 128Mb F-die (x4, x8, x16) DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK dV ...
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... All parts allow every cycle column address change case of row precharge interrupt, auto precharge and read burst stop 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP 3.3V r0.3V 70qC) ...
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SDRAM 128Mb F-die (x4, x8, x16) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle t CC time CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data ...
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SDRAM 128Mb F-die (x4, x8, x16) IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz Voltage 133MHz Min (V) I (mA) 3.45 3.3 3.0 0.0 2.6 -21.1 2.4 -34.1 2.0 -58.7 1.8 -67.3 1.65 -73.0 1.5 -77.9 1.4 -80.8 1.0 -88.6 0.0 ...
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SDRAM 128Mb F-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 ...
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SDRAM 128Mb F-die (x4, x8, x16) SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge ...