W26L010AT-12 Winbond, W26L010AT-12 Datasheet

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W26L010AT-12

Manufacturer Part Number
W26L010AT-12
Description
64K*16 high speed, low power CMOS static RAM
Manufacturer
Winbond
Datasheet

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GENERAL DESCRIPTION
The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536
operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
The W26L010A has an active low chip select, separate upper and lower byte selects, and a fast
output enable. No clock or refreshing is required. Separate byte select controls ( LB and UB ) allow
individual bytes to be written and read. LB controls I/O1-I/O8, the lower byte. UB controls I/O9
I/O16, the upper byte. This device is well suited for use in high-density, high-speed system
applications.
FEATURES
PIN CONFIGURATION
High speed access time: 10/12 nS (max.)
Low power consumption:
Single 3.3V power supply
Fully static operation
No clock or refreshing
Active: 530 mW (max.)
I/O2
I/O4
I/O5
I/O6
I/O8
I/O1
I/O3
I/O7
WE
V
V
NC
CS
A5
A6
A7
A8
A0
A1
A2
A3
A4
DD
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
64K
44-PIN
16 HIGH-SPEED CMOS STATIC RAM
40
39
36
28
44
43
42
41
38
37
35
34
33
32
31
30
29
27
26
25
24
23
A15
A14
A13
OE
UB
I/O16
I/O15
I/O14
I/O13
V
V
I/O12
I/O11
I/O10
I/O9
NC
A12
A11
A10
A9
NC
LB
SS
DD
- 1 -
BLOCK DIAGRAM
PIN DESCRIPTION
All inputs and outputs directly TTL compatible
Three-state outputs
Data byte control
Available packages: 44-pin 400 mil SOJ and
44-pin TSOP(II)
I/O1 I/O16
SYMBOL
A0 A15
LB (I/O1 I/O8), UB (I/O9 I/O16)
WE
OE
UB
V
CS
LB
V
NC
DD
SS
V
V
A15
WE
LB
OE
DD
UB
CS
SS
A0
.
.
DECODER
CONTROL
Publication Release Date: July 1998
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable Input
Output Enable Input
Lower Byte Select I/O1 I/O8
Upper Byte Select I/O9 I/O16
Power Supply
Ground
No Connection
DESCRIPTION
DATA I/O
ARRAY
CORE
W26L010A
16 bits that
I/O1
I/O16
Revision A3
.
.

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W26L010AT-12 Summary of contents

Page 1

... GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high performance CMOS technology. The W26L010A has an active low chip select, separate upper and lower byte selects, and a fast output enable ...

Page 2

TRUTH TABLE ...

Page 3

Operating Characteristics (V = 3. PARAMETER SYM. Input Low Voltage V IL Input High Voltage V IH Input Leakage I LI Current Output Leakage I LO Current ...

Page 4

AC Test Loads and Waveform R1 320 ohm 3.3V OUTPUT 30 pF Including Jig and Scope (V = 3. (1) Read Cycle PARAMETER Read Cycle Time Address ...

Page 5

AC Characteristics, continued (2) Write Cycle PARAMETER Write Cycle Time Chip Select to End of Write Address Valid to End of Write Address Setup Time Select to End of Write Write Pulse Width Write Recovery Time CS ...

Page 6

Timing Waveforms Read Cycle 1 (Address Controlled Address D OUT Read Cycle 2 (Chip Select Controlled, OE Address HIGH-Z D OUT Notes high for read cycle. 2. Device is ...

Page 7

Timing Waveforms, continued Read Cycle 3 (Output Enable Controlled, CS Address OE D OUT Write Cycle 1 (OE Clock) Address OE CS UB/ OUT ...

Page 8

... W26L010AJ-10 10 W26L010AJ-12 12 W26L010AT-10 10 W26L010AT-12 12 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure ...

Page 9

PACKAGE DIMENSIONS 44-pin Small Outline J Band Seating Plane 44-pin Standard Type Two TSOP ...

Page 10

... Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 - 10 - W26L010A DESCRIPTION Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 ...

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