KM416C1200CJ-6 Samsung, KM416C1200CJ-6 Datasheet

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KM416C1200CJ-6

Manufacturer Part Number
KM416C1200CJ-6
Description
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns
Manufacturer
Samsung
Datasheet

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Part Number:
KM416C1200CJ-6
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KM416C1200CJ-6
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
• Perfomance Range
Speed
C1000C
V1000C
C1200C
V1200C
- KM416C1000C/C-L (5V, 4K Ref.)
- KM416C1200C/C-L (5V, 1K Ref.)
- KM416V1000C/C-L (3.3V, 4K Ref.)
- KM416V1200C/C-L (3.3V, 1K Ref.)
Speed
-5
-6
Part
NO.
-5
-6
50ns
60ns
t
RAC
3.3V
3.3V
V
5V
5V
324
288
4K
CC
15ns
15ns
t
CAC
3.3V
Refresh
cycle
4K
1K
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
504
468
1K
110ns
90ns
t
RC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Normal
64ms
16ms
Refresh period
35ns
40ns
495
440
4K
t
PC
5V
Unit : mW
Remark
5V/3.3V
5V/3.3V
128ms
L-ver
770
715
1K
DESCRIPTION
(A0 - A9)
(A0 - A9)
A0-A11
A0 - A7
Note)
UCAS
LCAS
RAS
W
*1
*1
*1
: 1K Refresh
FUNCTIONAL BLOCK DIAGRAM
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
• Single +5V 10% power supply (5V product)
• Single +3.3V 0.3V power supply (3.3V product)
400mil packages
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
Memory Array
1,048,576 x16
Row Decoder
Cells
CMOS DRAM
Vcc
Vss
Data out
Data out
Data in
Data in
Lower
Buffer
Lower
Buffer
Upper
Buffer
Upper
Buffer
DQ0
DQ7
OE
DQ15
DQ8
to
to

Related parts for KM416C1200CJ-6

KM416C1200CJ-6 Summary of contents

Page 1

... RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ...

Page 2

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C •KM416C/V10(2)00CJ DQ0 2 DQ1 3 DQ2 4 DQ3 DQ4 7 DQ5 8 DQ6 9 DQ7 10 N RAS 14 *A11(N.C) 15 *A10(N. ...

Page 3

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE ...

Page 4

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I ...

Page 5

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V ...

Page 6

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column ...

Page 7

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times ...

Page 8

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 13 referenced to the later CAS falling edge at word read-modify-write cycle. CWD t 14. is specified from W falling edge to the earlier CAS rising edge CWL 15 referenced to the ...

Page 9

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C WORD READ CYCLE RAS UCAS LCAS ASR ADDRESS ...

Page 10

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR V ...

Page 11

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR V ...

Page 12

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...

Page 13

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS V - ...

Page 14

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS V - ...

Page 15

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS V - ...

Page 16

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS V ...

Page 17

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS V ...

Page 18

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR V - ...

Page 19

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR V - ...

Page 20

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR V - ...

Page 21

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V ...

Page 22

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...

Page 23

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...

Page 24

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP V - ...

Page 25

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP V ...

Page 26

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP V ...

Page 27

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ...

Page 28

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ...

Page 29

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ...

Page 30

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS ...

Page 31

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ...

Page 32

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...

Page 33

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS ...

Page 34

KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 50(44) TSOP(II) 400mil 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) ...

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