KM41C4000DJ-6 Samsung, KM41C4000DJ-6 Datasheet

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KM41C4000DJ-6

Manufacturer Part Number
KM41C4000DJ-6
Description
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns
Manufacturer
Samsung
Datasheet

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KM41C4000D, KM41V4000D
• Performance Range
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
KM41C4000D
KM41V4000D
Speed
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
-5
-6
-7
Speed
Part
NO.
-5
-6
-7
50ns
60ns
70ns
t
RAC
15ns
15ns 110ns 40ns
20ns 130ns 45ns
t
Refresh
CAC
cycle
1K
3.3V
220
200
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
-
90ns 35ns
t
RC
Normal
16ms
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Refresh Period
t
PC
470
415
360
Unit : mW
5V
Remark
5V/3.3V
5V/3.3V
5V only
128ms
L-ver
DESCRIPTION
A0~A9
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II)
• +5V 10% power supply(5V product)
• +3.3V 0.3V power supply(3.3V product)
300mil packages
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
Memory Array
Row Decoder
4,194,304 x1
Cells
CMOS DRAM
Vcc
Vss
Data out
Data in
Buffer
Buffer
D
Q

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KM41C4000DJ-6 Summary of contents

Page 1

... Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per- formance microprocessor systems ...

Page 2

KM41C4000D, KM41V4000D •KM41C/V4000DJ RAS 3 N.C 4 A10 SOJ ) PIN CONFIGURATION (Top Views CAS 17 N.C ...

Page 3

KM41C4000D, KM41V4000D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...

Page 4

KM41C4000D, KM41V4000D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t Care CC1 I Don t Care CC2 I Don t Care CC3 I Don t Care CC4 Normal I CC5 L I Don t Care CC6 I L CC7 ...

Page 5

KM41C4000D, KM41V4000D CAPACITANCE (T = Parameter Input capacitance [D] Input capacitance [A0 ~ A10] Input capacitance [RAS, CAS, W] Output capacitance [Q] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V ...

Page 6

KM41C4000D, KM41V4000D AC CHARACTERISTICS ( Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time ...

Page 7

KM41C4000D, KM41V4000D TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...

Page 8

KM41C4000D, KM41V4000D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved (min) and V (max) are reference levels for measuring ...

Page 9

KM41C4000D, KM41V4000D READ CYCLE RAS CRP CAS ASR ADDRESS ...

Page 10

KM41C4000D, KM41V4000D WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ADDRESS ...

Page 11

KM41C4000D, KM41V4000D READ-WRITE / READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR ...

Page 12

KM41C4000D, KM41V4000D FAST PAGE READ CYCLE RAS CRP CAS ASR ROW A ADDR ...

Page 13

KM41C4000D, KM41V4000D FAST PAGE WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ROW A ADDR ...

Page 14

KM41C4000D, KM41V4000D FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR ROW A ADDR ...

Page 15

KM41C4000D, KM41V4000D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP CAS ASR V - ...

Page 16

KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS ...

Page 17

KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS ...

Page 18

KM41C4000D, KM41V4000D CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR CAS READ CYCLE t WRP ...

Page 19

KM41C4000D, KM41V4000D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : A = Don t care RAS CAS ...

Page 20

KM41C4000D, KM41V4000D PLASTIC SMALL OUT-LINE J-LEAD 26(20) SOJ 300mil #26(20) 0.0375 (0.95) 26(20) TSOP(II) 300mil 0.037 (0.95) 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.27) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.691 (17.54) MAX 0.671 (17.04) 0.047 ...

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