PHP6N50E Philips Semiconductors, PHP6N50E Datasheet

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PHP6N50E

Manufacturer Part Number
PHP6N50E
Description
500 V, power MOS transistor avalanche energy rated
Manufacturer
Philips Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHP6N50E
Manufacturer:
PHILIPS
Quantity:
17 000
Part Number:
PHP6N50E
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E is supplied in the SOT404 surface mounting package.
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
December 1998
PowerMOS transistors
Avalanche energy rated
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
, T
PIN
tab
1
2
3
stg
gate
drain
source
drain
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
DESCRIPTION
1
SYMBOL
SOT78 (TO220AB)
CONDITIONS
T
T
T
T
T
T
j
j
mb
mb
mb
mb
= 25 ˚C to 150˚C
= 25 ˚C to 150˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
g
tab
1
GS
GS
1 2 3
d
s
= 10 V
= 10 V
GS
= 20 k
QUICK REFERENCE DATA
SOT404
PHP6N50E, PHB6N50E
R
MIN.
- 55
V
DS(ON)
-
-
-
-
-
-
-
DSS
I
D
Product specification
= 5.9 A
1
= 500 V
tab
2
MAX.
500
500
125
150
1.5
5.9
3.7
24
3
30
Rev 1.200
UNIT
W
˚C
V
V
V
A
A
A

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PHP6N50E Summary of contents

Page 1

... N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB6N50E is supplied in the SOT404 surface mounting package. PINNING ...

Page 2

... prior avalanche = 25˚ refer to fig:18 CONDITIONS SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint max Product specification PHP6N50E, PHB6N50E MIN. MAX. UNIT - 287 - 5.9 MIN. TYP. MAX. UNIT - - ...

Page 3

... Measured from source lead to source bond pad MHz GS DS CONDITIONS T = 25˚ 25˚ dI/dt = 100 Product specification PHP6N50E, PHB6N50E MIN. TYP. MAX. UNIT 500 - - V - 0.1 - %/K - 1.2 1.5 2.0 3 ...

Page 4

... V GS PHP4N50 1000 10000 ˚ Product specification PHP6N50E, PHB6N50E Zth j-mb, Transient thermal impedance (K/ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 1us 10us 100us 1ms 10ms 100ms tp, pulse width (s) Fig.4. Transient thermal impedance f(t); parameter ...

Page 5

... 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product specification PHP6N50E, PHB6N50E VGS(TO max. typ. min. -60 -40 - 100 120 140 Fig.10. Gate threshold voltage . = f(T ); conditions 0.25 mA SUB-THRESHOLD CONDUCTION ...

Page 6

... Fig.17. Maximum permissible non-repetitive d(on) r d(off avalanche current ( 0.1 0.01 1E-06 100 150 Fig.18. Maximum permissible repetitive avalanche = f Product specification PHP6N50E, PHB6N50E IF, Source-Drain diode current (Amps) VGS = 0 V 150 0.2 0.4 0.6 0.8 1 VSDS, Source-Drain voltage (Volts f(V ); parameter T F SDS prior to avalanche = 125 C VDS ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". December 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification PHP6N50E, PHB6N50E 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.200 15,8 max ...

Page 8

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". December 1998 10.3 max 11 max 15.4 0.85 max (x2) Fig.20. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting . 8 Product specification PHP6N50E, PHB6N50E 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.200 ...

Page 9

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 PHP6N50E, PHB6N50E 9 Product specification Rev 1.200 ...

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