K4S281632F-TC75 Samsung, K4S281632F-TC75 Datasheet
K4S281632F-TC75
Specifications of K4S281632F-TC75
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K4S281632F-TC75 Summary of contents
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... SDRAM 128Mb F-die (x4, x8, x16) 128Mb F-die SDRAM Specification * Samsung Electronics reserves the right to change products or specification without notice. Revision 0.2 November. 2003 Preliminary CMOS SDRAM Rev. 0.2 November. 2003 ...
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SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November, 2003) - Preliminary spec release. Preliminary CMOS SDRAM Rev. 0.2 November. 2003 ...
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... Cycle) GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high perfor- mance CMOS technology ...
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SDRAM 128Mb F-die (x4, x8, x16) Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 ± 0.10 ± 0.004 0.875 0.008 +0.10 0.30 0.80 -0.05 +0.004 0.0315 0.012 -0.002 54Pin TSOP ...
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... CLK ADD LCKE LRAS LCBR CLK CKE * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register Column Decoder Latency & Burst Length ...
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SDRAM 128Mb F-die (x4, x8, x16) PIN CONFIGURATION (Top view) x8 x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 N.C ...
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SDRAM 128Mb F-die (x4, x8, x16) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ...
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SDRAM 128Mb F-die (x4, x8, x16) DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active) I CC2 Precharge standby current in PS CKE & CLK ≤ V power-down mode ...
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... Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632F-TC 4. K4S281632F-TL 5. Unless otherwise noted, input swing IeveI is CMOS 70°C) A Test Condition Burst length = 1 ≥ (min CKE ≤ V ...
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SDRAM 128Mb F-die (x4, x8, x16) AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870Ω (Fig output load circuit ...
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SDRAM 128Mb F-die (x4, x8, x16) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 ...
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SDRAM 128Mb F-die (x4, x8, x16) IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 ...
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SDRAM 128Mb F-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 ...
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SDRAM 128Mb F-die (x4, x8, x16) SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge ...