KM416C256DT-6 Samsung, KM416C256DT-6 Datasheet
KM416C256DT-6
Related parts for KM416C256DT-6
KM416C256DT-6 Summary of contents
Page 1
... Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ...
Page 2
KM416C256D, KM416V256D KM416C/V256DJ ¡Ü DQ0 DQ1 DQ2 DQ3 V CC DQ4 DQ5 DQ6 DQ7 N.C N.C W RAS N PIN CONFIGURATION (Top Views ¡Û DQ15 3 ...
Page 3
KM416C256D, KM416V256D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
Page 4
KM416C256D, KM416V256D DC AND OPERATING CHARACTERISTICS Symbol Power I Don't care CC1 I Don't care Don't care CC2 I Don't care CC3 I Don't care CC4 Normal I Don't care CC5 L I Don't care CC6 I L Don't care ...
Page 5
KM416C256D, KM416V256D CAPACITANCE =25 ¡É Parameter Input capacitance [A0 ~ A8] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] (0 ¡É¡Â CHARACTERISTICS =5.0V ¡¾ 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Test condition (5V ...
Page 6
KM416C256D, KM416V256D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time ...
Page 7
KM416C256D, KM416V256D NOTES An initial pause of 200us is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is 1. achieved. Input voltage levels are Vih/Vil Transition times are measured between V ...
Page 8
KM416C256D, KM416V256D 512cycle of burst refresh must be executed within 8ms before and after self refresh in order to meet refresh specification (L- 11. version). 12. tASC, tCAH are referenced to the earlier CAS rising edge. 13. tCP is specified ...