KM416C4100CS-6 Samsung, KM416C4100CS-6 Datasheet
KM416C4100CS-6
Related parts for KM416C4100CS-6
KM416C4100CS-6 Summary of contents
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... Refresh cycle(4K Ref Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri- cated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • ...
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KM416C4000C, KM416C4100C PIN CONFIGURATION (Top Views) • KM416C40(1)00CS DQ0 3 48 DQ1 4 47 DQ2 5 46 DQ3 DQ4 8 43 DQ5 9 42 DQ6 10 41 DQ7 ...
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KM416C4000C, KM416C4100C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
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KM416C4000C, KM416C4100C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 I Normal Don t care CC2 I Don t care CC3 I Don t care CC4 I Normal Don t care CC5 I Don t care CC6 ...
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KM416C4000C, KM416C4100C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.4/0.6V CC ...
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KM416C4000C, KM416C4100C AC CHARACTERISTICS (Continued) Parameter Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS ...
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KM416C4000C, KM416C4100C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
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KM416C4000C, KM416C4100C NOTES initial pause of 200 is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for ...
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KM416C4000C, KM416C4100C are referenced to the earlier CAS falling edge. 13. ASC CAH 14 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle. ...
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KM416C4000C, KM416C4100C WORD READ CYCLE RAS UCAS LCAS ASR ...
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KM416C4000C, KM416C4100C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416C4000C, KM416C4100C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416C4000C, KM416C4100C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ...
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KM416C4000C, KM416C4100C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000C, KM416C4100C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000C, KM416C4100C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000C, KM416C4100C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000C, KM416C4100C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000C, KM416C4100C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000C, KM416C4100C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000C, KM416C4100C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000C, KM416C4100C FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...
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KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416C4000C, KM416C4100C FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000C, KM416C4100C FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC V ...
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KM416C4000C, KM416C4100C FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416C4000C, KM416C4100C FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416C4000C, KM416C4100C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000C, KM416C4100C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS ...
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KM416C4000C, KM416C4100C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR V ...
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KM416C4000C, KM416C4100C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS V - ...
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KM416C4000C, KM416C4100C PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.047 ...