K4H511638C-UCCC Samsung, K4H511638C-UCCC Datasheet
K4H511638C-UCCC
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K4H511638C-UCCC Summary of contents
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... ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) Table of Contents 1.0 Key Features .............................................................................................................................. 4 2.0 Ordering Information ................................................................................................................ 4 3.0 Operating Frequencies............................................................................................................... 4 4.0 Pin Description .......................................................................................................................... 5 5.0 Package Physical Dimension ................................................................................................... 6 6.0 Block Diagram (64Mbit x4 ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) Revision History Revision Month Year 0.0 April 2004 - First version for internal review 0.1 August 2004 - Preliminary spec release 0.2 October 2004 - Changed IDD current 1.0 January 2005 - Release ...
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... Ordering Information Part No. K4H510438C-UC/LB3 K4H510438C-UC/LA2 K4H510438C-UC/LB0 K4H510838C-UC/LCC K4H510838C-UC/LB3 K4H510838C-UC/LA2 K4H510838C-UC/LB0 K4H511638C-UC/LCC K4H511638C-UC/LB3 K4H511638C-UC/LA2 K4H511638C-UC/LB0 3.0 Operating Frequencies CC(DDR400@CL=3) Speed @CL2 Speed @CL2.5 166MHz Speed @CL3 200MHz CL-tRCD-tRP 3-3-3 Org. Max Freq. B3(DDR333@CL=2.5) ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 4.0 Pin Description DDQ DDQ SSQ SSQ ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 5.0 Package Physical Dimension #66 #1 (1.50) (0.71) NOTE REFERENCE ASS’Y OUT QUALITY #34 #33 22.22±0.10 (10×) 0.65TYP 0.30±0.08 0.65±0.08 (10×) 66pin TSOPII / Package ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 6.0 Block Diagram ( 32Mb x 4 Bank Select CK, CK ADD LCKE LRAS LCBR CK, CK CKE / 16Mb 8Mb x 16 x4/8/16 CK, CK Data Input Register Serial ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 7.0 Input/Output Function Description SYMBOL TYPE CK, CK Input CKE Input CS Input RAS, CAS, WE Input LDM,(UDM) Input BA0, BA1 Input 12] Input DQ I/O LDQS,(U)DQS I ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 8.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge ...
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... Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM 9.0 General Description The K4H510438C / K4H510838C / K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Syn- chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 12.0 DDR SDRAM Spec Items & Test Conditions Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ,DM and DQS inputs changing once ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A IDD1 : Operating current: One bank operation 1. Typical Case: Fro DDR200,266,333: Vdd = 2.5V, T=25’C; For DDR400: Vdd=2.6V,T=25’C Worst Case : Vdd ...
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... DDR SDRAM (V =2.7V 10°C) DD B0(DDR266@CL=2.5) 95 125 125 ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 16.0 AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and /CK inputs Input ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins Parameter Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot The area between the overshoot signal and VDD must be less ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 19.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 20.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system performance. these characteristics are for system simulation purposes and ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 21.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) Component Notes 17. For CK & CK slew rate ≥ 1.0 V/ns 18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 22.0 System Notes a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. Output Figure 2 : Pullup slew rate test load b. Pulldown slew rate is measured ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) 23.0 IBIS : I/V Characteristics for Input and Output Buffers DDR SDRAM Output Driver V-I Characteristics DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) Pulldown Current (mA) Typical Typical Voltage (V) Low High 0.1 6.0 6.8 0.2 12.2 13.5 0.3 18.1 20.1 0.4 24.1 26.6 0.5 29.8 33.0 0.6 34.6 39.1 0.7 39.4 44.2 0.8 43.7 49.8 ...
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DDR SDRAM 512Mb C-die (x4, x8, x16 0.0 Pullup Characteristics for Weak Output Driver 0.0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 Pulldown Characteristics for Weak Output ...
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DDR SDRAM 512Mb C-die (x4, x8, x16) Pulldown Current (mA) Typical Typical Voltage (V) Low High 0.1 3.4 3.8 0.2 6.9 7.6 0.3 10.3 11.4 0.4 13.6 15.1 0.5 16.9 18.7 0.6 19.6 22.1 0.7 22.3 25.0 0.8 24.7 28.2 ...
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