MRF19090S Motorola, MRF19090S Datasheet

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MRF19090S

Manufacturer Part Number
MRF19090S
Description
MRF19090SRF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
• Typical CDMA Performance: 1990 MHz, 26 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 3
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for Class AB PCN and PCS base station applications with
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 9 Watts
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
C
> = 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
MRF19090 MRF19090S MRF19090SR3
θJC
stg
GS
D
J
CASE 465C–02, STYLE 1
CASE 465B–03, STYLE 1
MRF19090SR3
MRF19090S
(MRF19090S)
LATERAL N–CHANNEL
(MRF19090)
MRF19090
(NI–880S)
RF POWER MOSFETs
1990 MHz, 90 W, 26 V
(NI–880)
M3 (Minimum)
1 (Minimum)
–65 to +150
+15, –0.5
Value
Class
1.54
Max
0.65
270
200
65
Order this document
by MRF19090/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF19090S Summary of contents

Page 1

... CASE 465C–02, STYLE 1 (NI–880S) (MRF19090S) Symbol Value Unit V 65 Vdc DSS V +15, –0.5 Vdc GS P 270 Watts D 1.54 W/°C °C T –65 to +150 stg °C T 200 J Class 1 (Minimum) M3 (Minimum) Symbol Max Unit °C/W R 0.65 θJC MRF19090 MRF19090S MRF19090SR3 1 ...

Page 2

... DD out Output Mismatch Stress ( Vdc CW 750 mA, DD out 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19090 MRF19090S MRF19090SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS g fs VGS ...

Page 3

... ZO = 15.24 Ohms, Lambda = 0.0762 10.11 Ohms, Lambda = 0.0392 6.34 Ohms, Lambda = 0.0711 5.02 Ohms, Lambda = 0.0476 5.54 Ohms, Lambda = 0.0972 50.0 Ohms, Lambda = 0.194 50.0 Ohms  , ε Raw PCB Material 0.030″ Glass Teflon = 2.55 Copper, 3″ x 5″ Dimensions MRF19090 MRF19090S MRF19090SR3 3 ...

Page 4

... Figure 2. MRF19090 Test Circuit Component Layout MRF19090 MRF19090S MRF19090SR3 4 λ MRF19090 MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power Figure 6. Intermodulation Products Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage η versus Output Power MRF19090 MRF19090S MRF19090SR3 5 ...

Page 6

... Complex conjugate of the optimum load OL Figure 9. Series Equivalent Input and Output Impedance MRF19090 MRF19090S MRF19090SR3 6 Ω Ω Ω MHz 1930 4.5 + j6.1 1.1 + j4.5 1960 4.4 + j6.0 1.1 + j4.4 1990 4.3 + j6.1 1.1 + j4.3 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency ...

Page 7

... CASE 465C–02 ISSUE A (NI–880S) (MRF19090S) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc F INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19090 MRF19090S MRF19090SR3 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19090 MRF19090S MRF19090SR3 8 MOTOROLA RF DEVICE DATA MRF19090/D ...

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