CM100DY-12H MITSUBISHI, CM100DY-12H Datasheet - Page 2

• Manufacturer Part Number: CM100DY-12H
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
C
C
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
= 25 C, T
j
= 25 C unless otherwise specified
j
j
V
= 25 C unless otherwise specified
Symbol
V
Symbol
Symbol
R
R
R
150 C)
CE(sat)
t
t
I
C
I
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
th(j-c)
th(j-c)
Q
j
t
oes
EC
res
t
t
ies
rr
r
f
G
= 25 C unless otherwise specified
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
GE1
I
I
= 100A, V
j
E
E
) does not exceed T
= 300V, I
V
V
V
= 100A, di
= 100A, di
I
I
C
GE
C
I
CC
CE
V
E
= V
= 10mA, V
GE
= 100A, V
Test Conditions
= 100A, V
Test Conditions
Test Conditions
= V
= V
= 300V, I
GE2
= 0, V
Per FWDi
Per IGBT
GE
C
CES
GES
= 100A, V
= 15V, R
E
E
= 15V, T
/dt = –200A/ s
/dt = –200A/ s
, V
CE
, V
j(max)
GE
CE
C
GE
GE
CE
= 100A,
= 10V
= 15V
= 10V
= 0V
rating.
G
= 0V
= 0V
j
GE
= 150 C
= 6.3
Symbol
V
V
V
T
I
I
= 15V
CES
GES
CM
P
EM
I
I
T
–
–
–
stg
iso
C
E
c
j
HIGH POWER SWITCHING USE
Min.
Min.
Min.
MITSUBISHI IGBT MODULES
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM100DY-12H
1.47 ~ 1.96
1.96 ~ 2.94
–40 to 150
–40 to 125
2500
CM100DY-12H
200*
200*
600
100
100
400
190
20
2.15
0.27
Typ.
Typ.
Typ.
300
6.0
2.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
INSULATED TYPE
Max.
2.8**
Max.
Max.
0.31
0.70
0.075
120
300
200
300
110
1.0
0.5
7.5
2.8
–
–
10
–
3.5
2
Amperes
Amperes
Amperes
Amperes
Grams
Watts
N · m
N · m
Vrms
Units
Volts
Volts
Sep.1998
Units
Units
Units
Volts
Volts
Volts
Volts
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C