PDMB150B12C2 Nihon Inter Electronics (NIEC), PDMB150B12C2 Datasheet - Page 2

• Manufacturer Part Number: PDMB150B12C2
• Description: IGBT MODULE Dual 150A 1200V
• Manufacturer: Nihon Inter Electronics (NIEC)

IGBT
50000
20000
10000
5000
2000
1000
500
200
100
300
250
200
150
100
50
50
16
14
12
10
0
8
6
4
2
0
0.1
0
0
Fig.5- Capacitance vs. Collector to Emitter Voltage
MODULE Dual 150A 1200
MODULE Dual 150A 1200
MODULE Dual 150A 1200
MODULE Dual 150A 1200V V V V
0.2
V
GE
15V
=20V
Fig.3- Collector to Emitter On Voltage
0.5
Fig.1- Output Characteristics
4
2
Collector to Emitter Voltage V
Collector to Emitter Voltage V
Gate to Emitter Voltage V
vs. Gate to Emitter Voltage
I
C
=75A
150A
1
12V
2
4
8
5
300A
12
10
6
GE
20
(Typical)
CE
CE
(V)
(Typical)
(V)
(V)
Coes
Cres
Cies
16
8
50
T
(Typical)
V
f=1MH
T
C
100
T
=125℃
C
GE
C
=25℃
=25℃
=0V
10V
8V
7V
9V
Z
200
10
20
800
700
600
500
400
300
200
100
1.4
1.2
0.8
0.6
0.4
0.2
16
14
12
10
0
8
6
4
2
0
1
0
0
0
0
Fig.4- Gate Charge vs. Collector to Emitter Voltage
R
T
t
t
OFF
L
C
t
ON
t
=4Ω
=25℃
f
r
Fig.6- Collector Current vs. Switching Time
150
Fig.2- Collector to Emitter On Voltage
25
4
300
Gate to Emitter Voltage V
vs. Gate to Emitter Voltage
Total Gate Charge Qg
I
150A
C
Collector Current I
=75A
50
450
8
PDMB150B12C
PDMB150B12C2 2 2 2
PDMB150B12C
PDMB150B12C
600
V
75
CE
=600V
400V
200V
300A
12
750
C
100
(A)
(nC)
GE
(Typical)
(V)
900
16
(Typical)
V
R
V
T
125
C
CC
G
GE
1050
=25℃
= 3.0 Ω
=600V
=±15V
T
C
(Typical)
=25℃
1200
150
20
16
14
12
10
8
6
4
2
0