GA100TS60U International Rectifier Corp., GA100TS60U Datasheet

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GA100TS60U

Manufacturer Part Number
GA100TS60U
Description
HALF-BRIDGE" IGBT INT-A-PAK
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
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Part Number:
GA100TS60U
Manufacturer:
IR
Quantity:
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Part Number:
GA100TS60U
Quantity:
560
Part Number:
GA100TS60U
Quantity:
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• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL recognition pending
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
"HALF-BRIDGE" IGBT INT-A-PAK
Benefits
Features
Thermal / Mechanical Characteristics
www.irf.com
V
I
I
I
I
V
V
P
P
T
T
R
R
R
SMPS, Welding
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
recovery
C
CM
LM
FM
STG
CES
GE
ISOL
D
D
J
@ T
JC
JC
CS
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Parameter
Parameter
GA100TS60U
Ultra-Fast
-40 to +150
-40 to +125
Max.
2500
±20
600
100
200
200
200
320
170
Typ.
200
0.1
@V
V
GE
V
CE
TM
CES
=
(on) typ.
Speed IGBT
15V
Max.
0.38
0.70
=
4.0
3.0
PD -50055B
,
600
I
C
= 1.6V
4/24/2000
=
V
100A
Units
Units
°C/W
N m
°C
W
V
A
V
g
.
1

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GA100TS60U Summary of contents

Page 1

... Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module www.irf.com PD -50055B GA100TS60U Ultra-Fast Speed IGBT 600 CES V = 1.6V CE (on) typ ...

Page 2

... GA100TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance „ Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T ...

Page 3

... T = 125 2.0 2.4 5 Fig Typical Transfer Characteristics GA100TS60U ° ° C sink riv ifie tio ...

Page 4

... GA100TS60U 120 100 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.20 0. .05 0.02 0. sis Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 ...

Page 5

... Fig Typical Gate Charge vs. 100 R = Ohm 15V 360V -60 -40 - Fig Typical Switching Losses vs. GA100TS60U = 400V = 66A 100 200 300 400 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 200 100 ...

Page 6

... GA100TS60U Ohm 150 C ° 15V 120 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125° 25° 1.0 2.0 3.0 4 rwa lta Fig ...

Page 7

... ° ° /dt Fig Typical Recovery Current vs GA100TS60U /µ / ...

Page 8

... GA100TS60U Fig Test Circuit for Measurement off(diode d(on Fig Test Waveforms for Circuit of Fig. 17, ...

Page 9

... Figure 21 480V Figure 22. www.irf.com GA100TS60U 480V @25° ...

Page 10

... GA100TS60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M5x0.8 T Pulse width 80µs; single shot. Case Outline — INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

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