GA200TS60U International Rectifier Corp., GA200TS60U Datasheet

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GA200TS60U

Manufacturer Part Number
GA200TS60U
Description
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
Manufacturer
International Rectifier Corp.
Datasheet

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Absolute Maximum Ratings
"HALF-BRIDGE" IGBT INT-A-PAK
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Thermal / Mechanical Characteristics
Benefits
Features
www.irf.com
V
I
I
I
I
V
V
P
P
T
T
R
R
R
C
CM
LM
FM
kHz in resonant mode
recovery
SMPS, Welding
frequencies 8-40 kHz in hard switching, >200
ISOL
STG
CES
GE
D
D
J
@ T
JC
JC
CS
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Parameter
Parameter
PRELIMINARY
GA200TS60U
-40 to +150
-40 to +125
Ultra-Fast
Max.
2500
600
200
400
400
400
±20
625
325
Typ.
200
0.1
@V
V
GE
CE
V
TM
CES
=
(on) typ.
Speed IGBT
15V
Max.
0.35
0.20
4.0
3.0
=
,
600
PD -5.058B
I
C
= 1.8V
=
V
200A
Units
Units
°C/W
N m
°C
W
V
A
V
g
.
1
3/20/98

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GA200TS60U Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA200TS60U PRELIMINARY Ultra-Fast -40 to +150 -40 to +125 PD -5.058B Speed IGBT 600 ...

Page 2

... GA200TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T ...

Page 3

... Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 10 = 15V GE 1 2.5 3.0 Fig Typical Transfer Characteristics GA200TS60U oth: D uty 5° °C sink riv ified ipation = 120 125 C ° ...

Page 4

... GA200TS60U 240 200 160 120 Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0 . 0.01 0.0001 0.001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 100 ...

Page 5

... C SHORTED 100 0 Fig Typical Gate Charge vs. 1000 100 -60 -40 -20 Fig Typical Switching Losses vs. GA200TS60U = 400V CC = 135A C 200 400 600 800 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = Ohm 15V GE = 360V ...

Page 6

... GA200TS60U Ohm 125 C ° 360V 15V 100 200 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 25° 125° 1.0 2.0 3.0 4 lta Fig ...

Page 7

... Fig Typical Reverse Recovery vs. di www.irf.com 1500 2000 /dt Fig Typical Recovery Current vs GA200TS60U 250 I = 400 A F 200 I = 200 100 A F 150 100 ° ° ...

Page 8

... GA200TS60U Fig. 17a - Test Circuit for Measurement off(diode td(on) t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining ...

Page 9

... Figure 18a's L D.U. 480V Figure 19. Pulsed Collector Current GA200TS60U Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... GA200TS60U Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — INT-A-PAK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...

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