QM150DY-HK Mitsumi Electronics, Corp., QM150DY-HK Datasheet - Page 4

• Manufacturer Part Number: QM150DY-HK
• Manufacturer: Mitsumi Electronics, Corp.

0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
10
2
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
5
3
2
7
5
3
2
0
10
1
0
7
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
–1
TRANSIENT THERMAL IMPEDANCE
V
I
I
T
–3
NON–REPETITIVE
0
BASE REVERSE CURRENT –I
0
C
B1
CHARACTERISTIC (TRANSISTOR)
CC
C
=150A
2
2
2
=25°C
=3A
SWITCHING TIME VS. BASE
=300V
2
3
3
3
T
T
4
4
4
j
j
=25°C
=125°C
3 4 5
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
–2
t
t
1
f
TIME (s)
s
7
2
2
2
10
3
3
3
4
4
4
0
5
5
7
7
10
2 3 4 5 7
10
100µ
–1
2
t
w
2
2
=50µ
S
3
3
B2
4
4
5
5
(A)
CE
S
7
7
10
(V)
10
10
1
3
0
400
300
200
100
100
10
10
10
10
90
80
70
60
50
40
30
20
10
0
0
COLLECTOR-EMITTER REVERSE VOLTAGE
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
200
40
HIGH POWER SWITCHING USE
60
0.8
–V
CEO
400
80
(V)
1.2
100 120
QM150DY-HK
SECOND
BREAKDOWN
AREA
T
T
T
600
j
j
j
I
I
=25°C
=125°C
=125°C
B2
B2
C
1.6
INSULATED TYPE
=–2A
=–5A
( C)
140
CE
800
160
2.0
(V)
Feb.1999