QM50DY-HB Mitsumi Electronics, Corp., QM50DY-HB Datasheet
QM50DY-HB
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QM50DY-HB Summary of contents
Page 1
... Collector current .......................... 50A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 3– Tab#110, t=0.5 20 QM50DY-HB INSULATED TYPE File No. E80271 Dimensions Feb.1999 ...
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... CE V =300V, I =50A, I =100mA, I =–1. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 310 3 500 –40~+150 –40~+125 2500 1 ...
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... T =125° =50A C I =25A C 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125°C ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.2 0.6 7 COLLECTOR-EMITTER REVERSE VOLTAGE QM50DY-HB INSULATED TYPE I =–1. =–3.5A B2 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...
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... – FORWARD CURRENT QM50DY-HB INSULATED TYPE =300V CC I =100mA B1 I =–1. =25° =125°C j – ...