QM200DY-HBK MITSUBISHI, QM200DY-HBK Datasheet - Page 3

• Manufacturer Part Number: QM200DY-HBK
• Description: 100A - transistor module for medium power switching use, insulated type
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
10
200
180
160
140
120
100
10
80
60
40
20
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
0
COLLECTOR-EMITTER VOLTAGE V
10
1.6
0
COLLECTOR-EMITTER SATURATION
–3
T
BASE-EMITTER VOLTAGE V
V
T
j
2
=25°C
CHARACTERISTICS (TYPICAL)
j
CE
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
3
=2.5V
2.0
T
T
1
4
j
j
BASE CURRENT I
=25°C
=125°C
5
VOLTAGE (TYPICAL)
7
10
I
2.4
–2
C
2
=50A
2
3
4
5
2.8
3
7
10
B
I
–1
C
(A)
=100A
2
3.2
I
4
C
BE
3
=150A
4
(V)
5
CE
7
3.6
(V)
5
10
0
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
4
3
2
1
0
1
0
10
10
4 5 7
SWITCHING TIME VS. COLLECTOR
1
1
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
2 3 4 5 7
2 3 4 5 7
T
T
10
DC CURRENT GAIN VS.
SATURATION VOLTAGE
V
V
j
j
=25°C
=125°C
CURRENT (TYPICAL)
BE(sat)
t
CE
1
s
HIGH POWER SWITCHING USE
=2.5V
2 3 4 5 7
t
V
on
CE(sat)
10
10
QM100DY-HBK
2
2
V
CE
I
B
2 3 4 5 7
2 3 4 5 7
t
=5.0V
=0.13A
f
10
V
I
I
B1
B2
CC
2
T
T
T
T
=200mA
=–2A
j
j
j
j
=300V
=25°C
=125°C
C
=25°C
=125°C
C
C
INSULATED TYPE
(A)
(A)
(A)
2 3 4
10
10
3
3
Feb.1999