APT5010LLL Microsemi Corporation, APT5010LLL Datasheet - Page 2

• Manufacturer Part Number: APT5010LLL
• Manufacturer: Microsemi Corporation

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
dv
C
V
Q
Q
Q
d(off)
E
E
d(on)
E
E
I
Q
t
SM
I
θJC
θJA
oss
t
t
SD
rss
S
iss
on
off
on
off
gd
rr
/
gs
r
f
g
rr
dt
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.1
0.3
10
3
SINGLE PULSE
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
46A
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
46A
, dl
, dl
S
S
/dt = 100A/µs)
10
= -
S
/dt = 100A/µs)
-3
46A
INDUCTIVE SWITCHING @ 125°C
)
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
I
I
dv
device itself.
D
D
I
I
D
D
= 333V, V
= 333V, V
/
= 46A, R
= 46A, R
dt
V
V
= 46A @ 25°C
= 46A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
DS
GS
GS
numbers reflect the limitations of the test circuit rather than the
G
GS
= 0.6Ω
= 250V
= 250V
= 25V
= 15V
= 10V
= 0V
10
j
G
G
-2
= +25°C, L = 1.51mH, R
GS
GS
= 5Ω
= 5Ω
= 15V
= 15V
I
S
≤
-
I
D
46A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
Duty Factor D = t 1 / t
MIN
10
≤ 700A/µs
-1
t 1
G
= 25Ω, Peak I
t 2
4360
11.0
TYP
TYP
895
545
510
845
595
TYP
608
60
95
24
50
11
15
25
3
V
APT5010B2LL_LLL
R
2
≤
V
DSS
MAX
MAX
MAX
0.25
184
L
1.3
40
46
1.0
8
= 46A
T
J
≤ 150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
C
J