CM150TU-12F Mitsumi Electronics, Corp., CM150TU-12F Datasheet
CM150TU-12F
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CM150TU-12F Summary of contents
Page 1
... 21.7 GuP EuP GvP EvP GwP EwP 5–M5NUTS 11 21.7 2.8 Tc measured point LABEL CM150TU-12F HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ............................................................ ¡Insulated Type ¡6-elements in a pack 107 4–φ5.5 90 ±0.25 MOUNTING HOLES 21.7 11 14.4 GuN EuN ...
Page 2
... GE IGBT part (1/6 module) FWDi part (1/6 module) *2 Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM150TU-12F HIGH POWER SWITCHING USE Ratings 600 ±20 150 300 (Note 2) 150 (Note 2) 300 520 – ...
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... ies oes C res ( MITSUBISHI IGBT MODULES CM150TU-12F HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 200 300 COLLECTOR CURRENT I (A) ...
Page 4
... FWDi part: 2 Per unit base = – – Single Pulse 25° – CM150TU-12F 10 – 0.24K/W th(j–c) = 0.47K/W th(j– – – – – ...