SKM200GB12T4 Semikron International, SKM200GB12T4 Datasheet
SKM200GB12T4
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SKM200GB12T4 Summary of contents
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SKM 200GB12T4 ® SEMITRANS 3 IGBT4 Modules SKM 200GB12T4 SKM 200GAL12T4 Features Typical Applications Remarks GB GAL 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 02-07-2008 LAN Values Units min. typ. max. Units © ...
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SKM 200GB12T4 ® SEMITRANS 3 IGBT4 Modules SKM 200GB12T4 SKM 200GAL12T4 Features Typical Applications Remarks GB GAL 2 Characteristics Symbol Conditions Inverse Diode Freewheeling Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ...
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SKM 200GB12T4 Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 3 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off ...
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SKM 200GB12T4 Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 11 Typ. CAL diode peak reverse recovery current 4 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 ...
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SKM 200GB12T4 UL recognized file 5 02-07-2008 LAN no 532 © by SEMIKRON ...