MRF19030 Motorola, MRF19030 Datasheet

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MRF19030

Manufacturer Part Number
MRF19030
Description
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
f r e q u e n c i e s f r o m 1 . 8 t o 2 . 0 G H z . S u i t a b l e f o r F M , T D M A , C D M A a n d
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 7
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for class AB PCN and PCS base station applications with
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
MRF19030SR3
MRF19030R3
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
CASE 465F–03, STYLE 1
2.0 GHz, 30 W, 26 V
MRF19030R3 MRF19030SR3
M3 (Minimum)
2 (Minimum)
–65 to +200
MRF19030SR3
–0.5, +15
MRF19030R3
Value
Class
83.3
0.48
Max
NI–400S
200
2.1
65
NI–400
Order this document
by MRF19030/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF19030 Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 Order this document by MRF19030/D MRF19030R3 MRF19030SR3 2.0 GHz LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI– ...

Page 2

... MHz and f1 = 1990.0 MHz 1990.1 MHz) Output Mismatch Stress ( Vdc CW 300 mA, DD out 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19030R3 MRF19030SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V ...

Page 3

... Chip Resistors (0805) R1 – 0.080″ x 0.595″ Microstrip Z2 0.080″ x 0.600″ Microstrip Figure 1. MRF19030 Test Circuit Schematic Figure 2. MRF19030 Test Circuit Component Layout MOTOROLA RF DEVICE DATA Z3 0.080″ x 0.480″ Microstrip Z4 0.325″ x 0.280″ Microstrip Z5 0.510″ x 0.200″ Microstrip Z6 0.510″ ...

Page 4

... Figure 3. Class AB Broadband Circuit Performance Figure 5. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF19030R3 MRF19030SR3 4 TYPICAL CHARACTERISTICS Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage η ...

Page 5

... Complex conjugate of the optimum load OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 1930 10.57 + j7.69 5.81 + j5.01 1960 10.54 + j7.43 5.84 + j4.67 1990 10.47 + j7.21 5.84 + j4.35 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF19030R3 MRF19030SR3 5 ...

Page 6

... MRF19030R3 MRF19030SR3 6 NOTES MOTOROLA RF DEVICE DATA ...

Page 7

... CASE 465F–03 ISSUE B NI–400S MRF19030SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc H INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19030R3 MRF19030SR3 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19030R3 MRF19030SR3 8 MOTOROLA RF DEVICE DATA MRF19030/D ...

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