MRF19125 Motorola, MRF19125 Datasheet

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MRF19125

Manufacturer Part Number
MRF19125
Description
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , C D M A a n d m u l t i c a r r i e r a m p l i f i e r
applications.
• Typical 2–Carrier N–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 2
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications with frequencies from
I
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
Reel.
DQ
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR —
IM3 —
= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
–37.0 dBc
–51 dB
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 26 Volts,
Symbol
Symbol
V
R
V
T
P
DSS
T
MRF19125 MRF19125S MRF19125SR3
θJC
stg
GS
D
J
MRF19125SR3
MRF19125S
LATERAL N–CHANNEL
MRF19125
1990 MHz, 125 W, 26 V
RF POWER MOSFETs
CASE 465B–03, STYLE 1
CASE 465C–02, STYLE 1
M3 (Minimum)
2 (Minimum)
–65 to +200
+15, –0.5
(MRF19125S)
(MRF19125)
Value
Class
(NI–880S)
1.89
Max
0.53
(NI–880)
330
200
65
Order this document
by MRF19125/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF19125 Summary of contents

Page 1

... DD Symbol V DSS stg T J Symbol R θJC MRF19125 MRF19125S MRF19125SR3 Order this document by MRF19125/D MRF19125 MRF19125S 1990 MHz, 125 LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF19125) CASE 465C–02, STYLE 1 (NI–880S) (MRF19125S) Value Unit ...

Page 2

... MHz and f1 = 1987.5 MHz 1990 MHz) Output Mismatch Stress ( Vdc 125 W CW 1300 mA 1930 MHz, DD out DQ VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. MRF19125 MRF19125S MRF19125SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS g ...

Page 3

... Vdc 1300 mA 1990 MHz MOTOROLA RF DEVICE DATA (T = 25°C unless otherwise noted) C Symbol Min G — ps η — IMD — IRL — P1dB — MRF19125 MRF19125S MRF19125SR3 Typ Max Unit 13.5 — — % –30 — dBc –13 — dB 130 — ...

Page 4

... Microstrip Z4 0.920″ x 0.048″ Microstrip Z5 0.605″ x 1.195″ Microstrip Z6 0.800″ x 0.084″ Microstrip Z8 0.660″ x 0.095″ Microstrip Figure 1. MRF19125 Test Circuit Schematic Table 1. MRF19125 Test Circuit Component Designations and Values Designators B1 C1 C2, C7 C3, C10 C4, C11 ...

Page 5

... Figure 2. MRF19125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19125 Rev 5 MRF19125 MRF19125S MRF19125SR3 5 ...

Page 6

... Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power η Figure 7. CW Performance MRF19125 MRF19125S MRF19125SR3 6 TYPICAL CHARACTERISTICS η Figure 4. Intermodulation Distortion Products versus Output Power η Figure 6. 2-Carrier N-CDMA Broadband η ...

Page 7

... Figure 9. Two-Tone Power Gain versus Output Power D Figure 11. Intermodulation Distortion Products versus Two–Tone Tone Spacing MOTOROLA RF DEVICE DATA η Figure 10. Two-Tone Broadband Performance Figure 12. 2-Carrier N-CDMA Spectrum MRF19125 MRF19125S MRF19125SR3 7 ...

Page 8

... Figure 13. Series Equivalent Input and Output Impedance MRF19125 MRF19125S MRF19125SR3 8 f MHz 1930 1.43 + j5.01 1960 1.51 + j4.88 1990 1.56 + j4.93 Ω Complex conjugate of source impedance Complex conjugate of the optimum load OL impedance at a given output power, voltage, IMD, bias current and frequency Ω ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF19125 MRF19125S MRF19125SR3 9 ...

Page 10

... MRF19125 MRF19125S MRF19125SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 465C–02 ISSUE A (NI–880S) (MRF19125S) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc F INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19125 MRF19125S MRF19125SR3 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19125 MRF19125S MRF19125SR3 12 MOTOROLA RF DEVICE DATA MRF19125/D ...

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