MRF9135L Motorola, MRF9135L Datasheet

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MRF9135L

Manufacturer Part Number
MRF9135L
Description
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical N–CDMA Performance @ 880 MHz, 26 Volts, I
• Internally Matched, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Charge Device Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
40
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
µ″ Nominal.
750 kHz: –47 dBc @ 30 kHz BW
C
> = 25°C
Test Conditions
Characteristic
Rating
DQ
= 1100 mA
Symbol
Symbol
MRF9135L MRF9135LR3 MRF9135LSR3
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
CASE 465A–06, STYLE 1
CASE 465–06, STYLE 1
MRF9135LSR3
MRF9135LR3
MRF9135LSR3
MRF9135L
LATERAL N–CHANNEL
MRF9135L
RF POWER MOSFETs
880 MHz, 135 W, 26 V
NI–780
NI–780S
M2 (Minimum)
C7 (Minimum)
1 (Minimum)
–65 to +200
+15, –0.5
Value
Class
Max
298
200
1.7
0.6
65
Order this document
by MRF9135L/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9135L Summary of contents

Page 1

... CASE 465A–06, STYLE 1 NI–780S MRF9135LSR3 Symbol V DSS –65 to +200 stg (Minimum) M2 (Minimum) C7 (Minimum) Symbol R θJC MRF9135L MRF9135LR3 MRF9135LSR3 Order this document by MRF9135L/D Value Unit 65 Vdc +15, –0.5 Vdc 298 Watts 1.7 W/°C °C °C 200 Class Max Unit °C/W 0.6 ...

Page 2

... W Avg. N–CDMA out f = 865 MHz and 895 MHz) Output Mismatch Stress ( Vdc 135 W CW 1100 mA, DD out 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) MRF9135L MRF9135LR3 MRF9135LSR3 2 = 25°C, 50 ohm system unless otherwise noted) Symbol I DSS I DSS I GSS V GS(th) V ...

Page 3

... DWG #990528JAM2  , ε = 2.55 GX–0300–55–22 r MRF9135L MRF9135LR3 MRF9135LSR3 0.105″ x 0.630″ Microstrip 0.145″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.180″ x 0.220″ Microstrip 0.110″ x 0.220″ Microstrip 0.200″ x 0.220″ Microstrip 0.900″ ...

Page 4

... Figure 2. 880 MHz Test Circuit Component Layout MRF9135L MRF9135LR3 MRF9135LSR3 4 MRF9135L 900 MHz MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 3. Class AB Broadband Circuit Figure 4. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η Performance Figure 5. Intermodulation Distortion versus η Figure 7. Power Gain and Efficiency versus MRF9135L MRF9135LR3 MRF9135LSR3 Output Power Output Power 5 ...

Page 6

... Figure 8. Power Gain, Efficiency and IMD η Figure 9. N–CDMA Performance Output Power MRF9135L MRF9135LR3 MRF9135LSR3 6 η versus Output Power versus Gain, ACPR, Efficiency Figure 10. Typical CDMA Spectrum MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω MHz 865 1.15 – j0.3 1.17 + j0.24 880 1.25 – j0.5 1.22 + j0.1 895 1.35 – j0.75 1.32 + j0.07 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF9135L MRF9135LR3 MRF9135LSR3 Ω 7 ...

Page 8

... MRF9135L MRF9135LR3 MRF9135LSR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9135L MRF9135LR3 MRF9135LSR3 9 ...

Page 10

... MRF9135L MRF9135LR3 MRF9135LSR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... PACKAGE DIMENSIONS (LID) S (INSULATOR) SEATING T PLANE CASE 465–06 ISSUE F NI–780 MRF9135L Z R (LID) S (INSULATOR) CASE 465A–06 ISSUE F NI–780S MRF9135LSR3 MRF9135L MRF9135LR3 MRF9135LSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9135L MRF9135LR3 MRF9135LSR3 ◊ 12 MOTOROLA RF DEVICE DATA ...

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