MJ10009 ON Semiconductor, MJ10009 Datasheet - Page 6

• Manufacturer Part Number: MJ10009
• Manufacturer: ON Semiconductor

The Safe Operating Area figures shown in Figures 11 and 12
are specified ratings for these devices under the test
conditions shown.
Figure 11. Forward Bias Safe Operating Area
Figure 12. Reverse Bias Switching
Safe Operating Area (MJ10009)
Figure 13. Power Derating
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MJ10009
6
FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as V
and represents a voltage–current condition that can be
sustained during reverse biased turn–off. This rating is
verified under clamped conditions so that the device is never
subjected to an avalanche mode. Figure 12 gives the
complete reverse bias safe operating area characteristics.
See Table 1 for circuit conditions.
There are two limitations on the power handling ability of
The data of Figure 11 is based on T
T
For inductive loads, high voltage and high current must be
J(pk)
SAFE OPERATING AREA INFORMATION
V
may be calculated from the data in Figure 10. At
Figure 14. Reverse Base Current versus
BE(off)
C
with No External Base Resistance
25_C. Second breakdown limitations do
CEX(sus)
at a given collector current
C
= 25_C; T
C
J(pk)
– V
CE
is