MMBT9013 Unisonic Technologies, MMBT9013 Datasheet

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MMBT9013

Manufacturer Part Number
MMBT9013
Description
Manufacturer
Unisonic Technologies
Datasheet

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UTC MMBT9013
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (500mA)
*Excellent hFE linearity.
*Complementary to UTC MMBT9012
MARKING
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
UTC
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Base-emitter saturation voltage
13
Base-emitter on voltage
Collector cutoff current
Emitter cutoff current
DC current gain
PARAMETER
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD.
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
V
V
BV
BV
BV
CE
BE
hFE1
hFE2
BE
I
I
CBO
EBO
CBO
CEO
EBO
(sat)
(sat)
(on)
(Ta=25°C, unless otherwise specified )
SYMBOL
(Ta=25°C, unless otherwise specified)
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
T
j
TEST CONDITIONS
Ic=500mA, I
Ic=500mA, I
V
V
V
CE
Ic=100µA, I
I
CE
V
CE
E
V
Ic=1mA, I
CB
=100µA, Ic=0
=1V,Ic=500mA
EB
=1V, Ic=10mA
=1V,Ic=50mA
=25V, I
=3V, I
1: EMITTER 2: BASE 3: COLLECTOR
*Pb-free plating product number: MMBT9013L
B
B
B
C
=50mA
=50mA
E
E
=0
=0
=0
=0
-55 ~ +150
RATING
500
225
150
40
20
5
1
MIN
0.6
40
20
64
40
5
2
TYP
0.16
0.91
0.67
120
120
3
SOT-23
MAX
UNIT
100
100
300
mW
0.6
1.2
0.7
QW-R206-021,A
mA
°C
°C
V
V
V
UNIT
nA
nA
V
V
V
V
V
V
1

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MMBT9013 Summary of contents

Page 1

... Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage UTC UNISONIC TECHNOLOGIES CO., LTD. 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: MMBT9013L (Ta=25°C, unless otherwise specified ) SYMBOL RATING V 40 CBO V 20 CEO ...

Page 2

... UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK D RANGE 64-91 78-112 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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