SST39VF800-70-4I-EK Silicon Storage Technology, Inc, SST39VF800-70-4I-EK Datasheet
SST39VF800-70-4I-EK
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SST39VF800-70-4I-EK Summary of contents
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... The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800Q/VF800 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF800Q/ VF800 conform to JEDEC standard pinouts for x16 memories. Featuring high performance word program, the SST39VF800Q/VF800 devices provide a typical word program time of 14 µ ...
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... Data# Polling ( When the SST39VF800Q/VF800 are in the internal Pro- gram operation, any attempt to read DQ complement of the true data. Once the Program operation is completed, DQ will produce true data. The device is ...
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... V (2.7-3.6V 3.0V-only system should be tied to a 5.0V±10% (4.5-5.5V) power supply The mixed voltage system environment where flash memory RC has to be interfaced with 5V system chips. The V not offered on the SST39VF800, instead Connect pin ...
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... A9 A13 2 A8 A12 3 A14 4 A15 5 A16 343 ILL2.3 TFBGA BALL 4 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 8,388,608 bit EEPROM Cell Array Y-Decoder DDQ 343 ILL B1 Standard Pinout 40 39 Top View ...
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... To activate the device when CE# is low. To gate the data output buffers. To control the write operations. To provide 3-volt supply (2.7-3.6V) Supplies power for input/output buffers. It should be either tied to V (2.7 - 3.6V) for 3V I 5.0V (4.5 - 5.5V) power supply to support 5V I/O. (Not offered on SST39VF800 device, instead NC) Unconnected pins. OE# WE ...
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... Care” for Command sequence 15 8 Notes for Software ID Entry Command Sequence 1. With A -A =0; SST Manufacturer Code = 00BFH, is read with SST39VF800Q/VF800 Device Code = 2781H, is read with A 2. The device does not remain in Software Product ID Mode if powered down CFI ABLE UERY DENTIFICATION ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ABLE YSTEM NTERFACE NFORMATION Address Data Data 1BH 0027H V DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1CH 0036H V DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1DH 0000H V 1EH 0000H V 1FH 0004H Typical time out for Word Program 2 20H 0000H Typical time out for min ...
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... Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C (1) ................................................................................................................................................................. Output Short Circuit Current (1) Note: Outputs shorted for no more than one second. No more than one output shorted at a time. (2) The absolute maximum stress ratings for SST39VF800 are referenced PERATING ANGE Range Ambient Temp Commercial 0 ° ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ABLE PERATING HARACTERISTICS Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current Auto Low Power Current ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input Low Voltage (CMOS) ...
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... AC CHARACTERISTICS T 12: SST39VF800Q/VF800 R ABLE Symbol Parameter T Read Cycle time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time OE (1) T CE# Low to Active Output CLZ (1) T OE# Low to Active Output OLZ (1) T CE# High to High-Z Output CHZ (1) T OE# High to High-Z Output ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ADDRESS A 18-0 CE# OE WE# HIGH IGURE EAD YCLE IMING IAGRAM 5555 ADDRESS OE# CE# DQ 15-0 XXAA SW0 IGURE ONTROLLED ROGRAM © 1999 Silicon Storage Technology, Inc ...
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... T CPH XX55 XXA0 DATA SW1 SW2 WORD (ADDR/DATA YCLE IMING IAGRAM OEH T OE DATA# IAGRAM 12 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information INTERNAL PROGRAM OPERATION STARTS 343 ILL5.0 T OES DATA# DATA 343 ILL6.1 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ADDRESS A 18-0 CE# OE# WE IGURE OGGLE IT IMING IAGRAM 5555 ADDRESS A 18-0 CE# OE WE# DQ 7-0 AA SW0 Note: The device also supports CE# controlled chip erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) ...
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... RASE IMING IAGRAM SIX-BYTE CODE FOR SECTOR ERASE 2AAA 5555 5555 2AAA SW1 SW2 SW3 SW4 RASE IMING IAGRAM 14 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information SW5 343 ILL17 SW5 343 ILL18.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 F 11 IGURE OFTWARE NTRY AND THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 F 12: CFI Q ...
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... SOFTWARE ID EXIT AND RESET 5555 ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 F 13 /CFI E IGURE OFTWARE XIT © 1999 Silicon Storage Technology, Inc. 2AAA 5555 IDA T WHP SW1 SW2 XIT 16 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 343 ILL10.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information V IHT INPUT V ILT AC test inputs are driven at V (2.4 V) for a logic “1” and V IHT inputs and outputs are V (2.0 V) and 14 IGURE NPUT UTPUT EFERENCE TO DUT F 15 IGURE EST ...
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... F 16 IGURE ORD ROGRAM LGORITHM © 1999 Silicon Storage Technology, Inc. 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Start Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Load Word Address/Word Data Wait for end of Program ( Data# Polling ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed F 17 IGURE AIT PTIONS © 1999 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? ...
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... Write data: XX90 Write data: XXF0 Address: 5555 Address: 5555 Wait T IDA Wait T IDA Return to normal Read Software ID operation F OMMAND LOWCHARTS 20 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Command Sequence Write data: XXF0 Address: XX Wait T IDA Return to normal operation 343 ILL15.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Chip Erase Command Sequence Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX80 Address: 5555 Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX10 Address: 5555 ...
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... SST39VF800Q-90-4I-BK SST39VF800 Valid combinations SST39VF800-70-4C-EK SST39VF800-70-4C-BK SST39VF800-90-4C-EK SST39VF800-90-4C-BK SST39VF800-70-4I-EK SST39VF800-70-4I-BK SST39VF800-90-4I-EK SST39VF800-90-4I-BK Example : Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. © 1999 Silicon Storage Technology, Inc. ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information PACKAGING DIAGRAMS 1.10 0.90 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 48 EAD HIN MALL UTLINE ACKAGE SST ACKAGE ...