CEM8206 Chino-Excel Technology Corp, CEM8206 Datasheet

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CEM8206

Manufacturer Part Number
CEM8206
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM8206
Manufacturer:
CET
Quantity:
20 000
Dual N-Channel Enhancement Mode Field Effect Transistor
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (T
FEATURES
20V , 6A , R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface Mount Package.
Gate-Source Voltage
Drain Current-Continuous
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
R
DS(ON)
DS(ON)
Parameter
-Pulsed
=30m
=20m
a
@V
@V
a
GS
GS
=4.5V.
=2.5V.
SO-8
a
a
5-73
A
1
T
=25 C unless otherwise noted)
Symbol
DS(ON)
J
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
JA
.
CEM8206
-55 to 150
Limit
24
12
20
62.5
6
2
6
D
S
8
1
1
1
D
G
7
2
1
1
D
S
6
3
Feb. 2003
2
2
Unit
W
C
V
V
A
A
A
D
C
G
/W
5
4
2
2
5

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CEM8206 Summary of contents

Page 1

... THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient =4.5V. GS =2.5V DS(ON) SO-8 1 =25 C unless otherwise noted) A Symbol STG 5-73 CEM8206 Feb. 2003 Limit Unit ...

Page 2

... CEM8206 ELECTRICAL CHARACTERISTICS (T Parameter 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...

Page 3

... V =4.5,3.5,2. 0.5 1.0 1 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 2400 2000 1600 1200 800 400 Drain-to Source Voltage (V) DS Figure 3. Capacitance CEM8206 =25 C unless otherwise noted) A Condition Symbol 0V, Is =1. =2. Tj=125 C 0 0.0 0.5 2.0 2.5 3 Figure 2 ...

Page 4

... CEM8206 1.60 1.40 1.20 1.00 5 0.80 0.60 0.40 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 5 V =4. = Qg, Total Gate Charge (nC) Figure 9. Gate Charge =250 A ...

Page 5

... Single Pulse -3 0. Square Wave Pulse Duration (sec) Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve Figure 13. Normalized Thermal Transient Impedance Curve CEM8206 d(on) V OUT V OUT 10% 50 10% PULSE WIDTH Figure 12. Switching Waveforms ...

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