NX29F010-55PL ETC-unknow, NX29F010-55PL Datasheet
NX29F010-55PL
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NX29F010-55PL Summary of contents
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... Vcc supply and can be programmed or erased in standard PROM programmers. The NX29F010 offers access times of 35, 45, 55, 70, and 90 ns allowing high-speed controller and DSPs' to operate without wait states. Byte-wide data appears on DQ0-DQ7. Separate chip enable (CE), write enable (WE), and output enable (OE) controls eliminates bus contention ...
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... Fowler-Nordheim tunneling. Data are programmed one byte at a time using the EPROM program- ming algorithm of hot electron injection. ERASE VOLTAGE GENERATOR 8 PGM VOLTAGE GENERATOR CHIP ENABLE/ OUTPUT ENABLE STB TIMER 8 Figure 1. NX29F010 Block Diagram DQ7-DQ0 8 INPUT/OUTPUT BUFFERS STB DATA LATCH LOGIC 8 Y-DECODER Y-GATING CELL ...
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... A10 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 GND 16 17 DQ3 Figure 2. NX29F010 32-pin Plastic DIP INDEX DQ0 Figure 3 ...
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... NX29F010 BUS OPERATIONS (1, 2) Table 2. Device Bus Operations Operation Read Write Standby Output Disable Notes Don't care, AIN = Address In The sector protect and sector unprotect functions must be implemented via programming equipment. See the Sector Protection/Unprotection section. ...
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... NX29F010 Standby Mode In the Standby Mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE input. The system can place the device in the standby mode when it is not reading or writing to the device. The device enters the CMOS standby mode when the CE pin is held at V ± ...
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... NX29F010 Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data protection mea- sures prevent accidental erasure or programming, which might otherwise be caused by spurious system level ...
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... NX29F010 Table 5. Command Definitions (1) Command Sequence Cycles Addr Data (3,4) Read 1 RA (5) Reset 1 XXXX (6) Auto-select Manufacturer Equiv 5555 Device Equiv 5555 Sector Protect 4 5555 (7,8) Verify (9) Program 4 5555 Chip Erase 6 5555 Sector Erase 6 5555 Notes: 1. Bus Operations are described in Table 2. 2. ...
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... NX29F010 Commands written to the device while the Embedded Program Algorithm is in progress are ignored. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a '0' back to a '1'. Attempting may halt the operation and set the error status bit, DQ5, to '1', or cause the Data Polling algorithm to indicate the operation was successful ...
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... NX29F010 START WRITE ERASE COMMAND SEQUENCE DATA POLL FROM SYSTEM EMBEDDED ERASE ALGORITHM IN PROGRESS DATA = FFH? YES ERASURE COMPLETE Figure 6. Erase Operation Notes: 1. For Erase Command Sequence. See Command Definitions table. 2. See "DQ3: Sector Erase Timer" for more information. NexFlash Technologies, Inc. ...
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... NX29F010 WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ3, DQ5, DQ6, and DQ7. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. Table 6 and the following subsections describe the functions of these bits. ...
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... NX29F010 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out ...
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... NX29F010 However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5 is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high ...
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... NX29F010 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM I Output Short Circuit Current (Max. Limit Commercial Operating Temperature A T Industrial Operating Temperature A T Storage Temperature STG Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...
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... NX29F010 DC CHARACTERISTICS: TTL/NMOS COMPATIBLE Symbol Parameter Description I Input Leakage Current Input Current Output Leakage Current Standby Current CCS CC ( Active Current (2, Active Current Input Low Voltage IL V Input High Voltage IH V Voltage For Auto-select and ...
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... NX29F010 AC CHARACTERISTICS: READ ONLY Std. Symbol Parameter t Read Cycle Time (1) RC (2) t Chip Enable Access Time CE (3) t Address Access Time ACC t Output Enable Access Time OE t Chip Enable to Output High Output Enable to Output High Output Enable Hold Time (1) OEH Toggle & ...
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... NX29F010 TEST CONDITIONS Table 6. AC Test Specifications Test Conditions 35 ns Output Load Output Load Capacitance (including jig capacitance) Input Rise and Fall Times 5 Input Pulse Levels 0 to 3.0 Input Timing Measurement 1.5 Reference Levels Output Timing Measurement 1.5 Reference Levels AC CHARACTERISTICS: ERASE AND PROGRAM Std ...
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... NX29F010 PROGRAM COMMAND SEQUENCE (Last Two Cycles ADDRESS 555H DATA t VCS Vcc Note Program Address Program Data, DOUT is the true data at the Program Address. ERASE COMMAND SEQUENCE (Last Two Cycles ADDRESS 2AAH ...
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... NX29F010 t RC ADDRESS VA t ACC OEH WE DQ7 DQ0-DQ6 Note Valid Address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle ADDRESS VA t ACC ...
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... NX29F010 AC ELECTRICAL CHARACTERISTICS Std. Symbol Parameter t Write Cycle Time ( Addess Setup Time Address Hold Time AH t Data Setup Time DS t Data Hold Time DH t Output Enable Setup Time (1) OES t Read Recovery Time Before Write GHWL t Write Enable Setup Time ...
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... NX29F010 ERASE AND PROGRAMMING PERFORMANCE Parameter Typ. Chip/Sector Erase Time 1.0 Byte Programming Time Chip Programming Time (3) 3.5 Notes: 1. Typical program and erase times assume the following conditions: 25°C, 5.0V Vcc, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions for Commercial and Industrial temperature ranges, Vcc = 4.5V (4.75V for –35), 100,000 cycles ...
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... NX29F010 PACKAGING INFORMATION 600-mil Plastic DIP Package Code 600-mil Plastic DIP (W) Inches Symbol Min Max Min Max Ref. Std 0.160 0.185 0.165 0.180 A1 0.020 0.030 0.010 — B 0.015 0.020 0.018 B1 0.050 0.065 0.050 C 0.008 0.012 0.010 D 1 ...
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... NX29F010 PACKAGING INFORMATION Plastic TSOP - 32-pins Package Code: T (Type I) S Plastic TSOP (T—Type I) Millimeters Symbol Min Max Ref. Std. No. Leads A – 1.20 A1 0.05 0.15 B 0.17 0.27 C 0.10 0.21 D 7.90 8.10 E 18.30 18.50 H 19.80 20.20 e 0.50 BSC L 0.50 0.70 a 0° 5° SEATING PLANE Inches Min Max 32 – 0.047 0.002 ...
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... NX29F010 PACKAGING INFORMATION PLCC (Plastic Leaded Chip Carrier) Package Code Plastic Leaded Chip Carrier (PL) Millimeters Symbol Min Max Ref. Std. No. Leads 32 A 3.33 3.56 A1 0.50 – A2 2.67 2.93 A3 1.91 0.81 b 0.66 8.10 b1 0.33 0.54 C 0.20 0.35 D 13.89 14.05 D1 14.86 15.10 D2 – 7.62 E 11.35 11.51 E1 12.32 12.57 E2 – 7.62 e 1.27 BSC NexFlash Technologies, Inc. NXPF001F-0600 06/22/00 © PIN ...
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... NX29F010-90W NX29F010-90PL NX29F010-90T Note: Contact NexFlash Marketing for availability of DIP packages ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 45 NX29F010-45PLI NX29F010-45TI 55 NX29F010-55PLI NX29F010-55TI 70 NX29F010-70PLI NX29F010-70TI 90 NX29F010-90PLI NX29F010-90TI 24 Package 600-mil Plastic DIP PLCC – Plastic Leaded Chip Carrier ...
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... NX29F010 PRELIMINARY DESIGNATION The “Preliminary” designation on an NexFlash data sheet indicates that the product is not fully characterized. The specifications are subject to change and are not guaran- teed. NexFlash or an authorized sales representative should be consulted for current information before using this product ...