FLL120MK Eudyna Devices Inc, FLL120MK Datasheet
FLL120MK
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FLL120MK Summary of contents
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... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...
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... FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 Case Temperature (° DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 4000 3000 2000 1000 0 150 200 OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.55 I DSS f = 2.3 GHz P out η ...
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... Download S-Parameters, click here 3 FLL120MK S 21 +90° 5.0 GHz 1 4.5 4.0 1.5 4.5 4.0 3.0 2.0 5.0 GHz 1 0.5GHz 0° 0.1 0.2 -90° S22 MAG ANG .824 179.4 .813 178.8 .810 177.7 .792 176.5 .778 174.0 ...
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... FLL120MK L-Band Medium & High Power GaAs FET For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...