STPS16045TV SGS-Thomson-Microelectronics, STPS16045TV Datasheet
STPS16045TV
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STPS16045TV Summary of contents
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... Maximum operating junction temperature * dV/dt Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth j a ISOTOP is a trademark of STMicroelectronics June 1999 - Ed: 3A STPS16045TV POWER SCHOTTKY RECTIFIER Parameter Per diode = 0.5 Per device sinusoidal ...
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... STPS16045TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode (Per diode) + P(diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equation : ...
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... Tj=125 C Tj=25 C 100 Tj=125 C VFM(V) 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=75 C 0.4 Tc=100 C = 0.2 Tc=125 C 0.2 = 0.1 Single pulse 0.0 1E+0 1E-3 1E-2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 STPS16045TV T tp(s) =tp/T tp 1E-1 1E+0 5E+0 VR( 3/4 ...
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... STPS16045TV PACKAGE MECHANICAL DATA ISOTOP Type Marking STPS16045TV STPS16045TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...