STPS80H100TV SGS-Thomson-Microelectronics, STPS80H100TV Datasheet
STPS80H100TV
Available stocks
Related parts for STPS80H100TV
STPS80H100TV Summary of contents
Page 1
... Rth j a July 1999 - Ed: 3A STPS80H100TV K2 K1 ISOTOP Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particu- larly, in high frequen cy circuitries where low switching losses and low noise are required. ...
Page 2
... STPS80H100TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1 (Per diode) + P(diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 s, < ...
Page 3
... Tj=125 C Tj= VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=50 C 0.4 = 0.2 Tc= 0.1 0.2 Tc=110 C Single pulse 0.0 1E+0 1E-3 1E-2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 1.0 0 100 1.6 1.8 2.0 STPS80H100TV T tp(s) tp =tp/T 1E-1 1E+0 5E+0 F=1MHz Tj=25 C VR( 100 3/4 ...
Page 4
... Maximum torque value: 1.5 N.m. Ordering type Marking STPS80H100TV STPS80H100TV Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...