ATmega128RZBV Atmel Corporation, ATmega128RZBV Datasheet - Page 365
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ATmega128RZBV
Manufacturer Part Number
ATmega128RZBV
Description
Manufacturer
Atmel Corporation
Specifications of ATmega128RZBV
Flash (kbytes)
128 Kbytes
Max. Operating Frequency
16 MHz
Max I/o Pins
86
Spi
5
Twi (i2c)
1
Uart
4
Adc Channels
16
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Crypto Engine
No
Sram (kbytes)
8
Eeprom (bytes)
4096
Operating Voltage (vcc)
1.8 to 3.6
Timers
6
Frequency Band
2.4 GHz
Max Data Rate (mb/s)
0.25
Antenna Diversity
No
External Pa Control
No
Power Output (dbm)
3
Receiver Sensitivity (dbm)
-101
Receive Current Consumption (ma)
16.0
Transmit Current Consumption (ma)
17.0
Link Budget (dbm)
104
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30.9.18
30.9.19
30.9.20
2549N–AVR–05/11
Programming the EEPROM
Reading the EEPROM
Programming the Fuses
A more efficient data transfer can be achieved using the PROG_PAGEREAD instruction:
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Flash read using programming instruction 3a.
3. Load the page address using programming instructions 3b, 3c and 3d. PCWORD (refer
4. Enter JTAG instruction PROG_PAGEREAD.
5. Read the entire page (or Flash) by shifting out all instruction words in the page (or Flash),
6. Enter JTAG instruction PROG_COMMANDS.
7. Repeat steps 3 to 6 until all data have been read.
Before programming the EEPROM a Chip Erase must be performed,
Erase” on page
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM write using programming instruction 4a.
3. Load address High byte using programming instruction 4b.
4. Load address Low byte using programming instruction 4c.
5. Load data using programming instructions 4d and 4e.
6. Repeat steps 4 and 5 for all data bytes in the page.
7. Write the data using programming instruction 4f.
8. Poll for EEPROM write complete using programming instruction 4g, or wait for t
9. Repeat steps 3 to 8 until all data have been programmed.
Note that the PROG_PAGELOAD instruction can not be used when programming the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM read using programming instruction 5a.
3. Load address using programming instructions 5b and 5c.
4. Read data using programming instruction 5d.
5. Repeat steps 3 and 4 until all data have been read.
Note that the PROG_PAGEREAD instruction can not be used when reading the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Fuse write using programming instruction 6a.
3. Load data high byte using programming instructions 6b. A bit value of “0” will program the
4. Write Fuse High byte using programming instruction 6c.
to
starting with the LSB of the first instruction in the page (Flash) and ending with the MSB
of the last instruction in the page (Flash). The Capture-DR state both captures the data
from the Flash, and also auto-increments the program counter after each word is read.
Note that Capture-DR comes before the shift-DR state. Hence, the first byte which is
shifted out contains valid data.
(refer to
corresponding fuse, a “1” will unprogram the fuse.
Table 30-7 on page
Table 30-14 on page
364.
338) is used to address within one page and must be written as 0.
ATmega640/1280/1281/2560/2561
348).
see “Performing Chip
WLRH
365
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