BTA208S-800E NXP Semiconductors, BTA208S-800E Datasheet - Page 7
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BTA208S-800E
Manufacturer Part Number
BTA208S-800E
Description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package
Manufacturer
NXP Semiconductors
Datasheet
1.BTA208S-800E.pdf
(14 pages)
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6. Characteristics
Table 6.
BTA208S-800E
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
GT
L
H
D
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
All information provided in this document is subject to legal disclaimers.
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dV
V
dV
see
T
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
DM
D
D
= 10 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
com
com
Rev. 05 — 14 April 2011
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; T
= 400 V; T
Figure 11
Figure 11
Figure 12
= 535 V; T
/dt = 0.1 V/µs; gate open circuit
/dt = 10 V/µs; gate open circuit;
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 25 °C; see
= 0.1 A; T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
j
j
= 0.1 A; T
= 125 °C
= 125 °C; I
= 125 °C; I
j
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
= 110 °C; exponential
j
= 25 °C;
j
= 125 °C;
T(RMS)
T(RMS)
Figure 10
Figure 9
= 8 A;
= 8 A;
BTA208S-800E
Min
-
-
-
-
-
-
-
-
-
0.25
-
60
10
5
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
10
10
10
25
30
30
25
1.65
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
A/ms
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