BTA312-800CT NXP Semiconductors, BTA312-800CT Datasheet - Page 3

• Manufacturer Part Number: BTA312-800CT
• Description: Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA312-800CT
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS )
(A)
50
40
30
20
10
0
10
duration; maximum values
RMS on-state current as a function of surge
-2
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
10
-1
1
s urge duration (s )
All information provided in this document is subject to legal disclaimers.
003a a f738
Rev. 1 — 22 February 2012
10
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
over any 20 ms period
p
p
p
T
= 20 ms; see
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
Figure
G
1; see
= 0.2 A; dI
Fig 2.
Figure
I
mb
j(init)
j(init)
T(RMS )
(A)
Figure
≤ 125 °C;
16
12
= 25 °C;
= 25 °C;
8
4
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
4; see
G
/dt = 0.2 A/µs
2; see
Figure 5
Figure 3
0
BTA312-800CT
50
Min
-
-
-
-
-
-
-
-
-
-40
-
100
© NXP B.V. 2012. All rights reserved.
003a a b688
3Q Hi-Com Triac
T
mb
Max
800
12
100
110
50
100
2
5
0.5
150
150
(°C)
150
°C
°C
Unit
V
A
A
A
A
A/µs
A
W
W
3 of 13
2
s