BTA312X-800C NXP Semiconductors, BTA312X-800C Datasheet - Page 3

• Manufacturer Part Number: BTA312X-800C
• Description: Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA312X-800C
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
I
T
T(RMS)
/dt
(A)
80
70
60
50
40
30
20
10
0
10
duration; maximum values
RMS on-state current as a function of surge
-2
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
10
-1
1
surge duration (s)
All information provided in this document is subject to legal disclaimers.
003aab681
Rev. 03 — 22 November 2010
10
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
over any 20 ms period
p
T
= 10 ms; sine-wave pulse
= 20 A; I
Figure
Figure
G
1; see
4; see
Fig 2.
= 0.2 A; dI
I
T(RMS)
(A)
h
j(init)
j(init)
≤ 61 °C; see
Figure 2
Figure 5
15
10
5
0
-50
temperature; maximum values
RMS on-state current as a function of heatsink
= 25 °C; t
= 25 °C; t
G
/dt = 0.2 A/µs
p
p
0
Figure
= 20 ms;
= 16.7 ms
BTA312X-800C
3;
50
Min
-
-
-
-
-
-
-
-
-
-40
-
100
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
003aab679
T
h
45
100
150
( C)
Max
800
12
95
105
2
2
0.5
125
150
Unit
V
A
A
A
A
A/µs
A
W
W
°C
°C
3 of 13
2
s