BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 4

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance

BT151-1000RT

Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration for sinusoidal currents
p
5
2
10 ms
mb
10
dl
134 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
12 A thyristor high blocking voltage high operating temperature
10
Rev. 01 — 6 August 2007
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
16
12
8
4
0
base temperature; maximum values
50
10
3
0
BT151-1000RT
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2007. All rights reserved.
T
001aaa956
003aab828
mb
I
TSM
( C)
t
10
150
2
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