BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 4
BT151-1000RT
Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT151-1000RT.pdf
(12 pages)
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration for sinusoidal currents
p
5
2
10 ms
mb
10
dl
134 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
12 A thyristor high blocking voltage high operating temperature
10
Rev. 01 — 6 August 2007
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
16
12
8
4
0
base temperature; maximum values
50
10
3
0
BT151-1000RT
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2007. All rights reserved.
T
001aaa956
003aab828
mb
I
TSM
( C)
t
10
150
2
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