BT151X-500C NXP Semiconductors, BT151X-500C Datasheet - Page 3

Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance

BT151X-500C

Manufacturer Part Number
BT151X-500C
Description
Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT151X-500C
Manufacturer:
NXP/恩智浦
Quantity:
20 000
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
April 2004
Thyristors
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
isol
, I
isol
th j-hs
th j-a
= 25 ˚C unless otherwise specified
D
R
/dt
Semiconductors
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from pin 2 to
external heatsink
CONDITIONS
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 23 A
D
/dt = 5 A/μs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% V
= 40 A; V
= 20 A; V
/dt = 50 V/μs; R
= 67% V
CONDITIONS
waveform;
R.H. ≤ 65% ; clean and dustfree
f = 1 MHz
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 25 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
; T
GK
RRM(max)
j
= 125 ˚C;
= 100 Ω
j
= 125 ˚C;
Gate open circuit
TM
; I
/dt = 30 A/μs;
G
j
= 125 ˚C
; T
R
= 0.1 A;
GK
j
= 125 ˚C
= 100 Ω
MIN.
MIN.
MIN.
MIN.
0.25
200
50
-
-
-
-
-
-
-
-
-
-
-
-
-
BT151X series C
TYP.
TYP.
TYP.
TYP.
1000
1.44
130
10
0.6
0.4
0.1
Product specification
55
10
70
-
2
7
2
-
-
MAX.
2500
MAX.
MAX.
MAX.
1.75
4.5
6.5
1.5
0.5
15
40
20
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
V/μs
V/μs
K/W
K/W
K/W
mA
mA
mA
mA
pF
μs
μs
V
V
V
V

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