BT151X-650C NXP Semiconductors, BT151X-650C Datasheet - Page 2
![Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance](/photos/41/50/415036/sot186a_3d_sml.gif)
BT151X-650C
Manufacturer Part Number
BT151X-650C
Description
Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT151X-500C.pdf
(8 pages)
GENERAL DESCRIPTION
Passivated thyristors in a full pack,
plastic envelope, intended for use
in
bidirectional
capability and high thermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
April 2004
Thyristors
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
case isolated
PIN
DRM
t
RGM
GM
G(AV)
stg
j
T
1
2
3
/dt
applications
Semiconductors
, V
RRM
cathode
anode
gate
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Junction temperature
2
t for fusing
blocking
DESCRIPTION
requiring
voltage
high
V
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
QUICK REFERENCE DATA
PIN CONFIGURATION
DRM
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
G
,
/dt = 50 mA/μs
= 20 A; I
on-state
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
current
G
case
= 50 mA;
1
1 2 3
hs
j
= 25 ˚C prior to
≤ 69 ˚C
BT151X-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
MAX.
500C
500
100
7.5
12
-500C -650C -800C
500
a
1
BT151X series C
MAX.
650C
Product specification
650
100
MAX.
7.5
12
650
100
110
150
125
7.5
0.5
12
50
50
2
5
5
1
MAX.
800C
g
800
800
100
7.5
12
Rev 1.000
UNIT
k
A/μs
UNIT
A
W
W
˚C
˚C
V
A
A
A
A
A
V
V
A
A
A
2
s