BT138-600 NXP Semiconductors, BT138-600 Datasheet - Page 3

• Manufacturer Part Number: BT138-600
• Description: Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

NXP Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
com
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T
T(RMS)
TM
G
j
j
j
D
D
D
D
D
D
DM
DM
com
= 15 A
= 125 ˚C
= 125 ˚C
= 125 ˚C; exponential
= 0.1 A; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 16 A; V
= 67% V
= 400 V; T
/dt = 5.4 A/ms; gate
= 12 A;
DRM(max)
T
GT
GT
T
D
G
T
DRM(max)
= 0.1 A
= 0.1 A
;
/dt = 5 A/µs
= 0.1 A
= 0.1 A
= V
= 0.1 A;
j
= 95 ˚C;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
2
BT138-
BT138-
DRM(max)
;
;
MIN.
0.25
100
...
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
MIN.
...F
1.4
0.7
0.4
0.1
10
22
20
10
50
5
8
7
8
6
-
-
MIN.
...G
200
35
35
35
70
40
60
40
60
30
10
...
-
-
-
-
MAX.
TYP.
TYP.
1.65
250
...F
1.5
0.5
Product specification
60
25
25
25
70
40
60
40
60
30
20
2
-
-
-
BT138 series
MAX.
MAX.
...G
100
1.5
2.0
50
50
50
60
90
60
90
60
-
-
-
-
Rev 1.400
UNIT
UNIT
UNIT
V/µs
V/µs
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µs
V
V
V