BT169D-L NXP Semiconductors, BT169D-L Datasheet - Page 2

Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package

BT169D-L

Manufacturer Part Number
BT169D-L
Description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT169D-L
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT169D-L
Product data sheet
Pin
1
2
3
Type number
BT169D-L
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Symbol Description
A
G
K
Pinning information
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
anode
gate
cathode
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 10 November 2011
Conditions
half sine wave; T
half sine wave; T
see
half sine wave; T
half sine wave; T
see
t
I
over any 20 ms period
p
T
Simplified outline
= 10 ms; sine-wave pulse
= 2 A; I
Figure 2
Figure
SOT54 (TO-92)
G
4; see
= 10 mA; dI
3
2
1
lead
lead
j(init)
j(init)
Figure 5
≤ 83 °C; see
≤ 83 °C; see
= 25 °C; t
= 25 °C; t
G
/dt = 100 mA/µs
p
p
Graphic symbol
= 8.3 ms
= 10 ms;
Figure
Figure 3
1;
A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
BT169D-L
sym037
G
© NXP B.V. 2011. All rights reserved.
K
SOT54
50
150
Version
Max
400
400
0.5
0.8
9
8
0.32
1
5
2
0.1
125
Unit
V
V
A
A
A
A
A
A/µs
A
V
W
W
°C
°C
2 of 12
2
SCR
s

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