BUK9520-100A NXP Semiconductors, BUK9520-100A Datasheet - Page 6

• Manufacturer Part Number: BUK9520-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9520-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
250
200
150
100
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
1
GS
min
4
(V) = 10
typ
6
2
max
4.6
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03nd85
(V)
Rev. 02 — 7 February 2011
10
3
4
5
3
2.2
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
120
100
16
15
14
13
12
80
60
40
20
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9520-100A
40
6
60
8
© NXP B.V. 2011. All rights reserved.
V
I
GS
D
03nd84
03nd82
(A)
(V)
10
80
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