PSMN016-100XS NXP Semiconductors, PSMN016-100XS Datasheet - Page 5

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C

PSMN016-100XS

Manufacturer Part Number
PSMN016-100XS
Description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
PSMN016-100XS
Preliminary data sheet
Symbol
R
R
Symbol
C
V
Fig 5.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.02
Isolation characteristics
0.2
0.1
0.05
single shot
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Parameter
isolation capacitance
RMS isolation voltage
10
-5
10
-4
Conditions
f = 1 MHz
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
sinusoidal waveform; clean and dust
free
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
10
-3
Rev. 3 — 21 October 2011
Conditions
see
vertical in free air
Figure 5
10
-2
10
-1
PSMN016-100XS
1
Min
-
-
Min
-
-
P
10
t
Typ
3
55
Typ
10
-
p
T
© NXP B.V. 2011. All rights reserved.
t
003aag618
p
δ =
(s)
Max
3.25
-
Max
-
2500
T
t
p
t
10
2
Unit
K/W
K/W
Unit
pF
V
5 of 14

Related parts for PSMN016-100XS