PSMN030-150P NXP Semiconductors, PSMN030-150P Datasheet
PSMN030-150P
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PSMN030-150P Summary of contents
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... PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... N-channel TrenchMOS SiliconMAX standard level FET Simplified outline 1 2 SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Graphic symbol mb G mbb076 3 © NXP B.V. 2010. All rights reserved ...
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... I D (%) 150 200 0 T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min - = 20 kΩ - -55 - ° 100 µs; ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P 2 10 prior to avalanche = 150 ° −3 −2 − unclamped inductive load Single-shot avalanche rating; avalanche ...
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... Z th(j-mb) (K/W) 0.2 −1 10 0.1 0.05 0.02 P −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min Typ - - - 60 003aaf053 t p δ −2 − (s) p Max Unit 0.6 K/W - K/W © ...
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... ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Min Typ Max = -55 °C 133 - - °C 150 - - ...
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... Fig 7. 003aaf056 = 25 ° (V) GS Fig 9. 003aaf058 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P 0. DS(on) (Ω) 4.4 V 4.6 V 4.8 V 0.06 5.2 V 0.04 0. °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 13. Input, output and reverse transfer capacitances 003aaf062 V = 120 V DD 100 120 140 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P (pF − MHz function of drain-source voltage ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN030-150P v.2 20101216 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PSMN030-150P Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PSMN030-150P ...