PSMN1R1-40BS NXP Semiconductors, PSMN1R1-40BS Datasheet - Page 3

PSMN1R1-40BS

Manufacturer Part Number
PSMN1R1-40BS
Description
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN1R1-40BS
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
10
350
300
250
200
150
100
10
50
-1
4
3
2
1
0
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
(1)
100
DS on
= V
DS
/ I
150
D
All information provided in this document is subject to legal disclaimers.
T
003a a f329
mb
1
(C)
Rev. 2 — 29 February 2012
200
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
DC
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN1R1-40BS
100
V
DS
(V)
t
100  s
1 ms
10 ms
100 ms
p
150
=10  s
© NXP B.V. 2012. All rights reserved.
T
003a a f328
mb
03aa16
(°C)
10
200
2
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