PSMN1R5-40PS NXP Semiconductors, PSMN1R5-40PS Datasheet

PSMN1R5-40PS

Manufacturer Part Number
PSMN1R5-40PS
Description
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PSMN1R5-40PS
Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
Table 1.
[1]
[2]
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
D
DS
tot
DSon
GD
G(tot)
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220.
Rev. 02 — 19 April 2011
High efficiency due to low switching
and conduction losses
DC-to-DC convertors
Load switching
Continuous current is limited by package.
Measured 3 mm from package.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
gate-drain charge V
total gate charge
Conditions
T
T
see
T
V
see
V
see
j
mb
mb
GS
GS
DS
≥ 25 °C; T
Figure 1
Figure 13
Figure 15
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 20 V; see
j
D
D
≤ 175 °C
GS
= 25 A; T
= 75 A;
Figure
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
14;
j
= 25 °C;
[1]
[2]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
1.3
32
136
Max Unit
40
120
338
1.6
-
-
V
A
W
mΩ
nC
nC

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PSMN1R5-40PS Summary of contents

Page 1

... PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220. Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Min - = 20 kΩ -20 [1] - [1] Figure ° -55 - ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN1R5-40PS Product data sheet N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS (V) DS 003a a f328 =10 μ 100 μ s ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R5-40PS Product data sheet N-channel 40 V 1.6 mΩ standard level MOSFET in TO220. Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Min Typ Max - 0.22 0. 003aaf327 tp δ ...

Page 6

... DS see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Min Typ Max 4 0. 250 ...

Page 7

... (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Min Typ - 0 117 = 25 °C j 003aaf317 = 175 ° ...

Page 8

... GS Fig 8. 003aaf320 V GS(th) (V) C iss C rss (V) GS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS 20 6.0 5.0 5 0.25 0.5 0.75 Output characteristics: drain current as a function of drain-source voltage; typical values 5 4 max 3 typ ...

Page 9

... GS Fig 12. Normalized drain-source on state resistance 003aaf326 4 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS 2 1.5 1 0 120 factor as a function of junction temperature GS(pl) ...

Page 10

... 175 ° 0.25 0.5 0.75 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS - function of drain-source voltage; typical values 003aaf325 = 25 ° (V) SD © NXP B.V. 2011. All rights reserved. 003aaf324 ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R5-40PS v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R5-40PS v.1 20110203 PSMN1R5-40PS Product data sheet N-channel 40 V 1.6 mΩ standard level MOSFET in TO220. Data sheet status Change notice ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN1R5-40PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN1R5-40PS ...

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