PSMN3R3-80BS NXP Semiconductors, PSMN3R3-80BS Datasheet
PSMN3R3-80BS
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PSMN3R3-80BS Summary of contents
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... PSMN3R3-80BS N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... T pulsed ° ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS Graphic symbol mbb076 Version SOT404 Min Max - kΩ -20 ...
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... Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS 120 der 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...
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... Product data sheet N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS Min Typ Max - 0.22 0. 003aag768 t P δ = ...
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... MHz °C; see Figure 0.53 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS Min Typ Max Unit 4 ...
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... DS 003aaf619 (A) D Fig 6. 003aaf623 R (m Ω iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS Min Typ - 0 109 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... GS 4.4 4.2 4.0 1 1.5 V (V) DS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normailzed drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 a 2.4 1.8 1.2 0.6 ...
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... GS 6.0 10 (A) D Fig 14. Gate charge waveform definitions 003aaf625 (pF) 90 120 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS 003aaf627 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN3R3-80BS v.2 20120229 • Modifications: Status changed from objective to product. • Various changes to content. PSMN3R3-80BS v.1 20110928 PSMN3R3-80BS Product data sheet N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R3-80BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 February 2012 Document identifier: PSMN3R3-80BS ...