PSMN8R0-30YL NXP Semiconductors, PSMN8R0-30YL Datasheet - Page 2

• Manufacturer Part Number: PSMN8R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN8R0-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN8R0-30YL
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DSM
DGR
GS
tot
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Package
Name
LFPAK; Power-SO8
source
source
source
gate
mounting base; connected to drain
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Conditions
T
T
V
V
T
T
V
V
t
pulsed; t
pulsed; t
p
j
j
mb
mb
GS
GS
GS
sup
≤ 25 ns; f ≤ 500 kHz; E
≥ 25 °C; T
≥ 25 °C; T
Rev. 2 — 16 May 2011
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
Simplified outline
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
SOT669 (LFPAK;
mb
mb
Power-SO8)
= 25 °C; see
= 25 °C
1 2 3 4
DS(AL)
GS
mb
D
= 20 kΩ
= 62 A;
Figure 1
≤ 70 nJ; pulsed
Figure 1
Figure 3
PSMN8R0-30YL
Graphic symbol
Min
-
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
SOT669
175
175
Version
Max
30
35
30
20
44
62
247
56
62
247
21
D
S
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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