PSMN8R0-40PS NXP Semiconductors, PSMN8R0-40PS Datasheet - Page 9

PSMN8R0-40PS

Manufacturer Part Number
PSMN8R0-40PS
Description
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PSMN8R0-40PS_2
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
2
min
60
typ
4
120
max
V
GS
T
j
(V)
( ° C)
03aa35
03aa27
180
6
Rev. 02 — 25 June 2009
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Gate charge waveform definitions
V
GS(th)
(V)
N-channel 40 V 7.6 mΩ standard level MOSFET
5
4
3
2
1
0
−60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN8R0-40PS
D
GS
Q
GS2
60
Q
max
G(tot)
min
typ
Q
GD
120
© NXP B.V. 2009. All rights reserved.
003aaa508
003aad280
T
j
(°C)
180
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