PSMN9R0-30YL NXP Semiconductors, PSMN9R0-30YL Datasheet - Page 3

• Manufacturer Part Number: PSMN9R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN9R0-30YL
Product data sheet
Fig 1.
Fig 3.
10
(A)
I
10
10
D
(A)
I
10
80
60
40
20
D
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
150
T mb (°C)
All information provided in this document is subject to legal disclaimers.
DSon
003aac545
1
= V
DS
200
/ I
Rev. 04 — 9 March 2011
D
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
PSMN9R0-30YL
100
V
DS
100 μs
1 ms
10 ms
100 ms
(V)
10 μs
150
© NXP B.V. 2011. All rights reserved.
T
003aac547
mb
03aa16
(°C)
10
200
2
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